Semiconductor Package with Single Sided Substrate Design and Manufacturing Methods Thereof

ABSTRACT

A semiconductor package includes a substrate unit, a die electrically connected to first contact pads, and a package body covering a first patterned conductive layer and the die. The substrate unit includes: (1) the first patterned conductive layer; (2) a first dielectric layer exposing a part of the first patterned conductive layer to form the first contact pads; (3) a second patterned conductive layer; (4) a second dielectric layer defining openings extending from the first patterned conductive layer to the second patterned conductive layer, where the second patterned conductive layer includes second contact pads exposed by the second dielectric layer; and (5) conductive posts extending from the first patterned conductive layer to the second contact pads through the openings, each of the conductive posts filling a corresponding one of the openings. At least one of the conductive posts defines a cavity.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims the benefit of U.S. Provisional Application No. 61/294,519, filed on Jan. 13, 2010, U.S. Provisional Application No. 61/310,290, filed on Mar. 4, 2010, and Taiwan Application No. 99112317, filed on Apr. 20, 2010, the disclosures of which are incorporated herein by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates generally to semiconductor device packages and manufacturing methods thereof. More particularly, the invention relates to semiconductor device packages with a single sided substrate design and manufacturing methods thereof.

2. Description of Related Art

Integrated circuit (IC) package technology plays an important role in the electronics industry. As light weight, compactness, and high efficiency have become typical requirements of consumer electronic and communication products, chip packages should provide superior electrical properties, small overall volume, and a large number of I/O ports. Substrates used in these chip packages often have multiple metal layers that can be electrically connected using traces and/or vias. As the size of chip packages decreases, these traces and vias for connecting the multiple metal layers can become smaller and more closely spaced, which can increase the cost and complexity of integrated circuit packaging processes. It is therefore desirable to develop a substrate that has a thin profile, that is manufactured by a less complex process, that is suitable for mass production, and that can be produced with high production yield. It is also desirable to develop corresponding packages including the substrate, and manufacturing methods of the substrate and of the corresponding packages.

It is against this background that a need arose to develop the semiconductor package and related methods described herein.

SUMMARY OF THE INVENTION

One aspect of the invention relates to a semiconductor package. In one embodiment, the semiconductor package includes a substrate unit, a die, and a package body. The substrate unit includes: (1) a first patterned conductive layer having an upper surface; (2) a first dielectric layer disposed adjacent to the upper surface of the first patterned conductive layer, the first dielectric layer exposing a part of the first patterned conductive layer to form a plurality of first contact pads; (3) a second patterned conductive layer below the first patterned conductive layer and having a lower surface; (4) a second dielectric layer between the first patterned conductive layer and the second patterned conductive layer, wherein the second dielectric layer defines a plurality of openings extending from the first patterned conductive layer to the second patterned conductive layer, and wherein the second patterned conductive layer includes a plurality of second contact pads exposed by the second dielectric layer; and (5) a plurality of conductive posts, each of the plurality of conductive posts extending from the first patterned conductive layer to a corresponding one of the plurality of second contact pads through a corresponding one of the plurality of openings in the second dielectric layer, the each of the plurality of conductive posts filling the corresponding one of the plurality of openings in the second dielectric layer. At least one of the plurality of conductive posts defines a cavity. The die is electrically connected to the plurality of first contact pads. The package body covers the first patterned conductive layer and the die.

Another aspect of the invention relates to a method of manufacturing a substrate. In one embodiment, the method includes: (1) providing a carrier having an upper surface and a lower surface, and with a first metal layer formed adjacent to the upper surface of the carrier; (2) forming a first plurality of conductive blocks extending vertically from the first metal layer, each of the first plurality of conductive blocks having an upper surface; (3) forming a first dielectric layer that defines a first plurality of openings, each of the first plurality of openings exposing a part of the upper surface of a corresponding one of the first plurality of conductive blocks; (4) forming a first plurality of conductive posts and a first patterned conductive layer, each of the first plurality of conductive posts extending from a corresponding one of the first plurality of conductive blocks to the first patterned conductive layer and filling a corresponding one of the first plurality of openings; and (5) removing the carrier to expose the first metal layer.

Another aspect of the invention relates to a method of manufacturing a semiconductor package. In one embodiment, the method includes: (1) providing a substrate including (a) a metal layer; (b) a plurality of conductive blocks formed adjacent to the metal layer, each of the plurality of conductive blocks having an upper surface; (c) a dielectric layer that defines a plurality of openings, each of the plurality of openings exposing a part of the upper surface of a corresponding one of the plurality of conductive blocks; (d) a patterned conductive layer; and (e) a plurality of conductive posts, each of the plurality of conductive posts extending from a corresponding one of the plurality of conductive blocks to the patterned conductive layer and filling a corresponding one of the plurality of openings; (2) electrically connecting a die to the patterned conductive layer; (3) forming a package body covering the dielectric layer and the die; and (4) removing the metal layer to expose the plurality of conductive blocks.

Other aspects and embodiments of the invention are also contemplated. The foregoing summary and the following detailed description are not meant to restrict the invention to any particular embodiment but are merely meant to describe some embodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 2 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 3 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 4 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 5 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 6 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 7 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 8 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 9 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 10 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 11A through FIG. 11Y illustrate a method of manufacturing a semiconductor package, according to an embodiment of the invention;

FIG. 12 illustrates a cross section view of a semiconductor package, according to an embodiment of the invention;

FIG. 13 illustrates a top cross section view of the semiconductor package of FIG. 12, according to an embodiment of the invention;

FIG. 14A through FIG. 14U illustrate a method of manufacturing a substrate for a semiconductor package, according to embodiments of the invention; and

FIG. 15A through FIG. 15C illustrate a method of manufacturing a semiconductor package, according to embodiments of the invention.

The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of some embodiments of the invention. Reference will now be made in detail to some embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the descriptions to refer to the same or like features.

DETAILED DESCRIPTION OF THE INVENTION

Attention first turns to FIG. 1, which illustrates a cross-section view of a semiconductor package 100, according to an embodiment of the invention. The semiconductor package 100 includes a die 102, a substrate unit 104, and a package body 106. The substrate unit 104 includes a patterned conductive layer 110 having an upper surface 112, and one or more conductive blocks 114 having a lower surface 116. The patterned conductive layer 110 extends laterally within the substrate unit 104. The substrate unit 104 also includes a dielectric layer 118 between the patterned conductive layer 110 and the conductive blocks 114. The dielectric layer 118 has a lower surface 134. The dielectric layer 118 defines openings 120 that extend from the patterned conductive layer 110 to the conductive blocks 114. Each of a plurality of conductive posts 122 extend from the patterned conductive layer 110 to a corresponding one of the conductive blocks 114 through a corresponding one of the openings 120. The conductive posts 122 may be formed as a conductive layer such as a seed layer (see FIG. 11K). Alternatively, the conductive posts 122 may include a first portion formed as a conductive layer such as a seed layer (see FIG. 11K), and a second portion formed on the seed layer (see FIG. 11M). At least part of the first portion of the conductive posts 122 may be disposed between the second portion of the conductive posts 122 and the conductive blocks 114. In one embodiment, each of the plurality of conductive posts 122 substantially fills the corresponding one of the openings 120. The substrate unit 104 further includes a dielectric layer 124 that is disposed adjacent to the upper surface 112 of the patterned conductive layer 110. The dielectric layer 124 may be solder mask. The dielectric layer 124 exposes a part of the patterned conductive layer 110 to form first contact pads 126. In one embodiment, the first contact pads 126 may be positioned outside the footprint of the die 102, such as in wire bonding applications. Alternatively or in addition, the first contact pads 126 may be positioned under the die 102, such as in flip-chip bonding applications. In one embodiment, the first contact pads 126 may be covered by a surface finish layer (not shown).

In one embodiment, the dielectric layer 118 exposes the lower surface 116 of the conductive blocks 114 to form second contact pads 130. The second contact pads 130 may be for electrical connection externally to the package 100, such as electrical connection to another semiconductor package or to other components on a circuit board. For example, an electrical contact 133, such as a solder ball, may be electrically connected to and disposed adjacent to a corresponding one of the second contact pads 130.

In one embodiment, each of the plurality of conductive posts 122 has a height in the range from about 30 μm to about 150 μm, such as from about 30 μm to about 50 μm, from about 30 μm to about 100 μm, from about 50 μm to about 100 μm, and from about 100 μm to 150 μm. Each conductive post 122 may be in the range from about 150 μm to 250 μm in diameter, such as about 200 μm in diameter. Each conductive post 122 has an upper surface 142 having a first area and a lower surface 144 having a second area. In one embodiment, the first area is larger than the second area. In addition, an upper surface 146 of each of the second contact pads 130 has a third area. The diameter of the second contact pads 130 may range from about 150 μm to upwards of about 300 μm. Therefore, in one embodiment, the third area is larger than the second area. Alternatively, the third area may be smaller than or equal to the second area. In one embodiment, the upper surface 142 and the lower surface 144 of the conductive posts 122 may have a shape including but not limited to a substantially circular shape, a substantially elliptical shape, a substantially square shape, and a substantially rectangular shape.

In embodiments of the invention having a single sided substrate design, the conductive posts 122 electrically connect the patterned conductive layer 110 to the second contact pads 130 without the need for vias, such as plated through holes. This can significantly reduce the cost of the packages 100. In addition, some of the conductive posts 122 (such as conductive posts 122 a disposed at least partially under the die, as described below) can facilitate conduction of heat away from the die 102 and out of the package 100. Also, the second contact pads 130 can be buried in the dielectric layer 118, which can increase mounting reliability of the package 100 because stress centralization is reduced.

In one embodiment, the lower surface 116 of the conductive blocks 114 is recessed from the lower surface 134 of the dielectric layer 118, so that the second contact pads 130 are recessed from the lower surface 134. Recessing the second contact pads 130 from the lower surface 134 can facilitate attachment of the electrical contacts 133 to the second contact pads 130. Alternatively, the lower surface 116 of the conductive blocks 114 may be exposed at the lower surface 134 of the dielectric layer 118.

In one embodiment, the package 100 has a thickness 150 in the range of about 200 μm to about 500 μm, such as from about 200 μm to about 350 μm, from about 300 μm to about 350 μm, from about 300 μm to about 400 μm, from about 300 μm to about 450 μm, and from about 300 μm to about 500 μm, although the thickness of the package 100 is not constrained to this range.

In one embodiment, bonding pads on an active surface 138 of the die 102 are electrically connected to the first contact pads 126 via bonding wires 136. The first contact pads 126 are disposed around the die 102, and may completely or partially surround the die 102. The package body 106 substantially covers or encapsulates the die 102, the bonding wires 136, and the first patterned conductive layer 110 to provide mechanical stability as well as protection against oxidation, humidity, and other environmental conditions. The package body 106 may be made of a molding material that can include, for example, a Novolac-based resin, an epoxy-based resin, a silicone-based resin, other another suitable encapsulant. Suitable fillers can also be included, such as powdered SiO₂.

In one embodiment, the die 102 is disposed adjacent to the dielectric layer 124, a part of which may serve as a die pad. A die attach layer 140 formed from a die attach material such as adhesive or film may optionally be added between the die 102 and the dielectric layer 124. The die attach layer 140 may include epoxy, resin, or other suitable materials.

Single-sided substrates such as the substrate unit 104 often have a single metal layer (such as the patterned conductive layer 110). Within this single metal layer, routing can take place via traces to attain a fan-in configuration, a fan-out configuration, or a combination of both. In one embodiment, the patterned conductive layer 110 may include traces 148 that electrically connect each first contact pads 126 to a corresponding one of the conductive posts 122, and to a corresponding one of the second contact pads 130. In the embodiment of FIG. 1, the traces 148 electrically connect the first contact pads 126 to second contact pads 130 that extend outside the footprint of the die 102 in a fan-out configuration. In one embodiment, a part of the patterned conductive layer 110 that is at least partially under the die 102 may also be electrically connected to a second contact pad 130 a via a conductive post 122 a at least partially under the die 102. Although the die 102 is not electrically connected to the conductive post 122 a and the second contact pad 130 a in the embodiment of FIG. 1, the conductive post 122 a and the second contact pad 130 a can still help to conduct heat away from the die 102 and out of the package 100.

FIG. 2 illustrates a cross section view of a semiconductor package 200, according to an embodiment of the invention. The semiconductor package 200 is in many respects similar to the semiconductor package 100 described with reference to FIG. 1, so only aspects of the semiconductor package 200 that are different are discussed here. The semiconductor package 200 includes a substrate unit 204 that includes a patterned conductive layer 210 (similar to the patterned conductive layer 110) including first contact pads 226 (similar to the first contact pads 126), traces 248 (similar to the traces 148), conductive posts 222 (similar to the conductive posts 122), a conductive layer 214, and a dielectric layer 228. The conductive layer 214 includes second contact pads 230 (similar to second contact pads 130) and one or more traces 249 adjacent to a lower surface 234 of a dielectric layer 218 (similar to the dielectric layer 118). The dielectric layer 228 exposes a part of the conductive layer 214 to form the second contact pads 230. In one embodiment, the first contact pads 226 may be covered by a surface finish layer 227.

In one embodiment, the die 102 is electrically connected to a second contact pad 230 b under the die 102 via bonding wire 136, a first contact pad 226 b outside the footprint of the die 102, a trace 248 b, and a conductive post 222 b. This support of fan-in by the package 200 is facilitated by the trace 248 b, which laterally extends from under the die 102 to the first contact pad 226 b located outside the footprint of the die 102. As previously described with reference to FIG. 1, routing can take place via traces included in the single metal layer 210 to attain a fan-in configuration, a fan-out configuration, or a combination of both. The second contact pad 230 b may cover the conductive post 222 b, so that no additional trace is needed on the lower surface 234 of the dielectric layer 218.

As described previously, an advantage of the single sided substrate design of embodiments of the invention is that conductive posts electrically connect a patterned conductive layer on a first side of a substrate unit to contact pads on a second side of a substrate unit without the need for vias, such as plated through holes. The package 200 leverages this advantage of single sided substrate design. In addition, the additional conductive layer 214 of the package 200 provides additional routing flexibility via the traces 249 on the lower surface 234 of the dielectric layer 218. In one embodiment, a second contact pad 230 a is electrically connected to a conductive post 222 a via the trace 249, and can be laterally displaced from its corresponding conductive post 222 a. The trace 249 may be covered by the dielectric layer 228, and may cover the conductive post 222 a. It can be advantageous to laterally displace the conductive posts 222 from their corresponding second contact pads 230 to simplify routing within the package 200, as the positioning of the second contact pads 230 may be fixed based on external interfacing requirements to the package 200.

FIG. 3 illustrates a cross section view of a semiconductor package 300, according to an embodiment of the invention. The semiconductor package 300 is similar to the semiconductor package 100 described with reference to FIG. 1, except that the die 302 is flip-chip bonded. An underfill layer 141 may optionally be added between the die 302 and the dielectric layer 124. As a result, the second contact pad 130 a under the die 302 may be electrically connected to the die 302 via a fused conductive bump 335 extending through the dielectric layer 124, which may be made of a conductive material such as solder. The die 302 may also be electrically connected to one or more second contact pads 130 outside of the perimeter of the die, such as for fan-out applications. The electrical connection of the die 302 to the second contact pads 130 outside of the perimeter of the die may be through one or more fused conductive bumps 335 under the die to the patterned conductive layer 110 to traces (not shown) in the dielectric layer 118. It would be understood by one of ordinary skill in the art that the package 200 of FIG. 2 may also support flip-chip bonding in a similar manner.

FIG. 4 illustrates a cross section view of a semiconductor package 400, according to an embodiment of the invention. The semiconductor package 400 is similar to the semiconductor package 100 described with reference to FIG. 1, except that the die attach layer 140 is adjacent to the dielectric layer 118. The die attach layer 140 may be positioned in an opening 402 defined by a dielectric layer 424 (otherwise similar to the dielectric layer 124 of FIG. 1). It would be understood by one of ordinary skill in the art that the package 200 of FIG. 2 may also support a similar structure.

FIG. 5 illustrates a cross section view of a semiconductor package 500, according to an embodiment of the invention. The semiconductor package 500 is similar to the semiconductor package 300 described with reference to FIG. 3, except that the underfill layer 141 is adjacent to the dielectric layer 118. The underfill layer 141 may be positioned between the die 302 and the dielectric layer 118 in an opening 502 defined by a dielectric layer 524 (otherwise similar to the dielectric layer 124 of FIG. 1). It would be understood by one of ordinary skill in the art that the package 200 of FIG. 2 may also support flip-chip bonding with a similar structure.

FIG. 6 illustrates a cross section view of a semiconductor package 600, according to an embodiment of the invention. The semiconductor package 600 is similar to the semiconductor package 100 described with reference to FIG. 1, except that a patterned conductive layer 610 defines an opening 611 that is substantially filled by a part of a dielectric layer 624, and one or more conductive posts 622 each define a cavity 623 that is substantially filled by a part of the dielectric layer 624. The patterned conductive layer 610, the dielectric layer 624, and the conductive posts 622 are otherwise similar to the patterned conductive layer 110, the dielectric layer 124, and the conductive posts 122 of FIG. 1, respectively.

FIG. 7 illustrates a cross section view of a semiconductor package 700, according to an embodiment of the invention. The semiconductor package 700 is similar to the semiconductor package 200 described with reference to FIG. 2, except that a patterned conductive layer 710 defines an opening 711 that is substantially filled by a part of a dielectric layer 724, and one or more conductive posts 722 each define a cavity 723 that is substantially filled by a part of the dielectric layer 724. The patterned conductive layer 710, the dielectric layer 724, and the conductive posts 722 are otherwise similar to the patterned conductive layer 210, the dielectric layer 124, and the conductive posts 222 of FIGS. 1 and 2, respectively.

FIG. 8 illustrates a cross section view of a semiconductor package 800, according to an embodiment of the invention. The semiconductor package 800 is similar to the semiconductor package 300 described with reference to FIG. 3, except that a patterned conductive layer 810 defines an opening 811 that is substantially filled by the fused conductive bump 335, and one or more conductive posts 822 each define a cavity 823 that is substantially filled by the fused conductive bump 335. The patterned conductive layer 810, and the conductive posts 822 are otherwise similar to the patterned conductive layer 110 and the conductive posts 122 of FIG. 1. It would be understood by one of ordinary skill in the art that the package 200 of FIG. 2 may also support flip-chip bonding with a similar structure.

FIG. 9 illustrates a cross section view of a semiconductor package 900, according to an embodiment of the invention. The semiconductor package 900 is similar to the semiconductor package 400 described with reference to FIG. 4, except that a patterned conductive layer 910 defines an opening 911 that is substantially filled by an die attach layer 940, and one or more conductive posts 922 each define a cavity 923 that is substantially filled by the die attach layer 940. The patterned conductive layer 910, the conductive posts 922, and the die attach layer 940 are otherwise similar to the patterned conductive layer 110, the conductive posts 122, and the die attach layer 140 of FIG. 1. It would be understood by one of ordinary skill in the art that the package 200 of FIG. 2 may also support a similar structure.

FIG. 10 illustrates a cross section view of a semiconductor package 1000, according to an embodiment of the invention. The semiconductor package 1000 is similar to the semiconductor package 800 described with reference to FIG. 8, except that the underfill layer 141 is adjacent to the dielectric layer 118. It would be understood by one of ordinary skill in the art that the package 200 of FIG. 2 may also support flip-chip bonding with a similar structure.

FIGS. 11A through 11Y illustrate a method of manufacturing a semiconductor package, according to an embodiment of the invention. For ease of presentation, the following manufacturing operations are described with reference to the package 200 of FIG. 2. However, it is contemplated that the manufacturing operations can be similarly carried out to form other semiconductor packages that may have different internal structure from the package 200, such as the packages illustrated in FIGS. 1, 3-10, and 12. It is also contemplated that the manufacturing operations can be carried out to form a substrate strip including an array of connected semiconductor packages, each of which may correspond to a package such as those illustrated in FIGS. 1, 3-10, and 12. As described in FIG. 11Y, the array of connected semiconductor packages may be singulated into individual packages such as those illustrated in FIGS. 1-10 and 12.

Referring to FIG. 11A, a carrier 1100 is provided. In one embodiment, the carrier 1100 includes a core layer (not shown) between two carrier conductive layers (not shown) attached to the core layer. Each carrier conductive layer may be formed from a metal, a metal alloy, a matrix with a metal or a metal alloy dispersed therein, or another suitable electrically conductive material. For example, each carrier conductive layer may include a metal foil formed from copper or an alloy including copper. The metal foil may have a thickness in the range from about 10 μm to about 30 μm, such as in the range from about 15 μm to about 25 μm.

The carrier 1100 has an upper surface 1102 and a lower surface 1104. A conductive layer 1103 (conductive sheet 1103) is disposed adjacent to the upper surface 1102, and a conductive layer 1105 (conductive sheet 1105) is disposed adjacent to the lower surface 1104. Each of the conductive layer 1103 and the conductive layer 1105 may be formed from a metal, a metal alloy, a matrix with a metal or a metal alloy dispersed therein, or another suitable electrically conductive material. For example, the conductive layers 1103 and 1105 may include a releasable metal foil formed from copper or an alloy including copper. The conductive layers 1103 and 1105 may be attached to the carrier 1100 by a release layer (not shown). In one embodiment, the release layer is an adhesive layer that may be organic or inorganic, such as tape. The tape, which can be implemented as a single-sided or double-sided adhesive tape, secures components at an appropriate spacing with respect to one another, and allows subsequent manufacturing operations to be carried out with those components disposed adjacent to the carrier 1100. Each of the conductive layer 1103 and the conductive layer 1105 may have a thickness in the range from about 2 μm to about 20 μm, such as in the range from about 3 μm to about 5 μm, from about 3 μm to about 10 μm, from about 10 μm to about 20 μm, and from about 15 μm to about 20 μm.

As illustrated in FIG. 11B, in one embodiment a barrier layer 1162 may optionally be disposed adjacent to the conductive layer 1103 such that the conductive layer 1103 is between the carrier 1100 and the barrier layer 1162. Similarly, a barrier layer 1164 may optionally be disposed adjacent to the conductive layer 1105 such that the conductive layer 1105 is between the carrier 1100 and the barrier layer 1164. The barrier layers 1162 and 1164 may serve as etch stop layers. Each barrier layer may be formed from a metal, a metal alloy, a matrix with a metal or a metal alloy dispersed therein, or another suitable electrically conductive material. For example, each barrier layer may be formed from tantalum, tungsten, chromium, nickel, gold, tin, lead, and/or suitable alloys including at least one of these materials. In one embodiment, the barrier layer may include a nickel sublayer and an adjacent gold sublayer, or a gold sublayer and an adjacent nickel sublayer. In another embodiment, the barrier layer may be formed from a tin-lead alloy and/or a tin-silver alloy. Each barrier layer may be formed by a sputtering process, an immersion process, a plating process, and/or other suitable methods known in the art. In embodiments in which the barrier layers 1162 and 1164 are used, these barrier layers are present until being removed in FIG. 11X, as described below.

As illustrated in FIG. 11C, a photoresist material may be formed adjacent to the conductive layers 1103 and 1105. Alternatively, the photoresist material may be formed adjacent to the barrier layers 1162 and 1164 (see FIG. 11B). The photoresist material may be a dry film photoresist, or another type of patternable layer or dielectric layer. The photoresist layers 1106 and 1108 may be formed by coating, printing, or any other suitable technique. Predetermined or selected portions of the photoresist layers 1106 and 1108 may be photoimaged and developed so as to create openings, including openings 1107 a-1107 b exposing the conductive layer 1103, and openings 1109 a-1109 b exposing the conductive layer 1105. The photoresist layers 1106 and 1108 may be photochemically defined using a photomask (not shown). Photoimaging and developing may have advantages of lower cost and decreased process time as compared to other approaches for creating openings in the photoresist layers 1106 and 1108. The resulting openings can have any of a number of shapes, including a cylindrical shape, such as a circular cylindrical shape, an elliptic cylindrical shape, a square cylindrical shape, or a rectangular cylindrical shape, or a non-cylindrical shape, such as a cone, a funnel, or another tapered shape. It is also contemplated that lateral boundaries of the resulting openings can be curved or roughly textured.

As illustrated in FIG. 11D, an electrically conductive material is applied into the openings, including the openings 1107 a-1107 b defined by the photoresist layer 1106 and the openings 1109 a-1109 b defined by the photoresist layer 1108 to form conductive blocks 1110 extending vertically from the conductive layer 1103, and conductive blocks 1111 extending vertically from the conductive layer 1105. Alternatively, the conductive blocks 1110 may extend vertically from the barrier layer 1162 (see FIG. 11B), and the conductive blocks 1111 may extend vertically from the barrier layer 1164 (see FIG. 11B). The conductive blocks 1110 and 1111 may be formed from a metal, a metal alloy, a matrix with a metal or a metal alloy dispersed therein, or another suitable electrically conductive material. For example, the conductive blocks 1110 and 1111 may include one or more layers of copper or an alloy including copper. The conductive blocks 1110 and 1111 may be formed using any of a number of coating techniques, such as chemical vapor deposition, electroless plating, electrolytic plating, printing, spinning, spraying, sputtering, or vacuum deposition.

As illustrated in FIG. 11E, at least one of barrier layers 1166 and 1168 may be formed instead of the barrier layers 1162 and/or 1164 described previously with reference to FIG. 11B. The barrier layers 1166 and 1168 may serve as etch stop layers. A first portion 1110 a of the conductive block 1110 may be formed. The barrier layer 1166 may then be disposed adjacent to the first portion 1110 a by a sputtering process, an immersion process, a plating process, and/or other suitable methods known in the art. A second portion 1110 b of the conductive block 1110 may then be formed adjacent to the barrier layer 1166, such that the barrier layer 1166 is between the first portion 1110 a and the second portion 1110 b. The barrier layer 1168 may be formed in a similar manner between a first portion 1111 a and a second portion 1111 b of the conductive block 1111. The barrier layers 1166 and 1168 may be formed from similar materials to those used to form the barrier layers 1162 and 1164, as previously described with reference to FIG. 11B.

As illustrated in FIG. 11F, the photoresist layers 1106 and 1108 are stripped to expose the conductive layers 1103 and 1105. Then, a layer 1112 is provided. In one embodiment, the layer 1112 is pre-formed with a set of first openings 1112 a, and positions of the first openings 1112 a respectively correspond to positions of the conductive blocks 1110. A similar layer 1114 (see FIG. 11G) may be provided with openings corresponding to positions of the conductive blocks 1111. In one embodiment, the layer 1112 includes a fiber-reinforced resin material, such as a prepreg material, including the fibers 1190 to strengthen the layer 1112. As shown in FIG. 11F, the fibers 1190 are initially oriented along a generally horizontal plane within the layer 1112. While the openings 1112 a are shown in FIG. 11F as partially extending through the layer 1112, it is contemplated for some embodiments that the openings 1112 a also can fully extend through the layer 1112.

As illustrated in FIG. 11G, the layer 1112 is formed adjacent to the conductive blocks 1110 and the exposed portions of the conductive layer 1103. In one embodiment, the layer 1112 corresponds to and includes the dielectric layer 218 shown in FIG. 2. Similarly, the layer 1114 is formed adjacent to the conductive blocks 1111 and the exposed portions of the conductive layer 1105. The layers 1112 and 114 substantially cover the conductive layers 1103 and 1105, respectively, such that the conductive layers 1103 and 1105 are embedded in the layers 1112 and 1114, respectively. In one embodiment, the layer 1112 may be formed by laminating a dielectric material on an upper surface 1120 of each of the conductive blocks 1110 and the exposed portions of the conductive layer 1103. Similarly, the layer 1114 may be formed by laminating a dielectric material on an upper surface 1121 (inverted for manufacturing operations) of each of the conductive blocks 1111 and the exposed portions of the conductive layer 1105. In one embodiment, the fibers 1190 subsequent to lamination of the layers 1112 and 1114 are re-oriented, with portions adjacent to the conductive blocks 1110 and 1111 being pushed along a vertically extending direction of the conductive blocks 1110 and 1111, and away from the conductive layers 1103 and 1105, respectively.

The laminated dielectric material may be made of a fiber-reinforced resin material and/or prepreg (PP) for increased rigidity. The fibers may be glass fibers or Kevlar fibers (aramid fibers). The laminated dielectric material may be formed from a film reinforced with fibers to strengthen the dielectric material. Examples of resin materials that may be reinforced by fibers for use in the laminated dielectric material include Ajinomoto build-up film (ABF), bismaleimide triazine (BT), prepreg, polyimide (PI), liquid crystal polymer (LCP), epoxy, and other resin materials. The resin material may be partially cured. In one embodiment, the laminated dielectric material is preformed to define openings at locations corresponding to the conductive blocks 1110, or the conductive blocks 1111.

Alternatively, the layers 1112 and 1114 may be formed of an unreinforced, less rigid material, such as solder mask (solder resist), resin materials including but not limited to Ajinomoto build-up film (ABF), bismaleimide triazine (BT), prepreg, polyimide (PI), liquid crystal polymer (LCP), and epoxy, or another type of patternable layer or dielectric layer. This material may be applied using any of a number of coating techniques, such as printing, spinning, or spraying.

The layers 1112 and 1114 are then covered by conductive layers 1116 and 1117, respectively. The conductive layers 1116 and 1117 may be formed from similar materials to those used to form the conductive layers 1103 and 1105. Each of the conductive layers 1116 and 1117 may have a thickness in the range from about 10 μm to about 20 μm, such as in the range from about 10 μm to about 15 μm.

As illustrated in FIG. 11H, a portion of each of the conductive layers 1116 and 1117 is removed, such as by flash etching, to form conductive layers 1122 and 1123. Each of the conductive layers 1122 and 1123 may have a thickness in the range from about 3 μm to about 10 μm, such as in the range from about 3 μm to about 7 μm.

As illustrated in FIG. 11I, openings 1124 a and 1124 b exposing the layer 1112 are formed in the conductive layer 1122 to form a conductive layer 1128. Similarly, openings 1126 a and 1126 b exposing the layer 1114 are formed in the conductive layer 1123 to form a conductive layer 1129. It is contemplated that the openings 1124 and 1126 may have smaller widths than those of the conductive blocks 1110 and 1111, respectively. Alternatively, the openings 1124 and 1126 may have widths substantially equal to those of the conductive blocks 1110 and 1111, respectively. In one embodiment, portions (not shown) of the conductive layers 1128 and 1129 may be patterned to form at least a portion of a ground plane 1250 (see FIGS. 12 and 13). Patterning to form the layers 1128 and 1129 can be carried out in any of a number of ways, such as chemical etching, laser drilling, or mechanical drilling, and the resulting openings can have any of a number of shapes, such as a cylindrical shape, such as a circular cylindrical shape, an elliptic cylindrical shape, a square cylindrical shape, or a rectangular cylindrical shape, or a non-cylindrical shape, such as a cone, a funnel, or another tapered shape. It is also contemplated that lateral boundaries of the resulting openings can be curved or roughly textured.

As illustrated in FIG. 11J, openings 1130 a and 1130 b exposing the conductive blocks 1110 are formed in the layer 1112 to form a layer 1134. Similarly, openings 1132 a and 1132 b exposing the conductive blocks 1111 are formed in the layer 1114 to form a layer 1136. It is contemplated that the openings 1130 and 1132 are of sizes corresponding to those of the openings 1124 and 1126, respectively (see FIG. 11I). In one embodiment, portions (not shown) of the layers 1112 and 1114 may be patterned to expose conductive blocks positioned below the ground plane 1250 (see FIGS. 12 and 13). Patterning to form the layers 1134 and 1136 can be carried out in any of a number of ways, such as laser drilling, plasma etching, or plasma cleaning, and the resulting openings can have any of a number of shapes, such as a cylindrical shape, such as a circular cylindrical shape, an elliptic cylindrical shape, a square cylindrical shape, or a rectangular cylindrical shape, or a non-cylindrical shape, such as a cone, a funnel, or another tapered shape. It is also contemplated that lateral boundaries of the resulting openings can be curved or roughly textured. In one embodiment, one or more of the openings 1130 and 1132 (such as the openings 1130 b and 1132 b in FIG. 11J) may be substantially centered relative to corresponding ones of the conductive blocks 1110 and 1111, respectively. Alternatively or in addition, one or more of the openings 1130 and 1132 (such as the openings 1130 a and 1130 b in FIG. 11J) may be substantially off-center relative to corresponding ones of the conductive blocks 1110 and 1111, respectively.

As illustrated in FIG. 11K, a metallic material is disposed adjacent to the conductive layer 1128 and the conductive blocks 1110 to form a seed layer 1180. A similar seed layer 1181 is disposed adjacent to the conductive layer 1129 and the conductive blocks 1111. In one embodiment, the seed layer 1180 may substantially fill the openings 1130 such that portions of the seed layer 1180 form conductive posts, such as the conductive posts 222 a and 222 b of FIG. 2. Similarly, the seed layer 1181 may substantially fill the openings 1132 such that portions of the seed layer 1181 form conductive posts, such as conductive posts 1137 a and 1137 b. (The conductive posts 1137 a and 1137 b correspond to a separate semiconductor package and are shown on the opposite side of the carrier 1100.) Alternatively, the seed layer 1180 may partially fill the openings 1130 such that portions of the seed layer 1180 form a first portion of the conductive posts 222 a and 222 b of FIG. 2. The seed layer 1181 may partially fill the openings 1132 such that portions of the seed layer 1181 form a first portion of the conductive posts 1137 a and 1137 b. In one embodiment, conductive posts (not shown) may be formed between the ground plane 1250 (see FIGS. 12 and 13) and conductive blocks positioned below the ground plane 1250. The metallic material may have similar characteristics to the material used to form the conductive blocks 1110 and 1111, such as copper or an alloy of copper. The seed layers 1180 and 1181 may be formed using any of a number of coating techniques, such as electroless plating.

In one embodiment, the off-center positioning of the conductive post 222 a relative to the conductive block 1110 corresponds to the lateral displacement of the second contact pad 230 a relative to the conductive post 222 a shown in FIG. 2. The centered positioning of the conductive post 222 b relative to the conductive block 1111 corresponds to the centered positioning of the conductive post 222 b relative to the second contact pad 230 b shown in FIG. 2.

As illustrated in FIG. 11L, photoresist layers 1138 and 1139 may be formed adjacent to the seed layers 1180 and 1181, respectively. Predetermined or selected portions of the photoresist layers 1138 and 1139 may be photoimaged and developed so as to create openings 1140 and 1141, respectively. The openings 1140 expose the seed layer 1180, and the openings 1141 expose the seed layer 1181. The photoresist layers 1138 and 1139 (and the openings 1140 and 1141) have similar characteristics and are formed similarly to the photoresist layers 1106 and 1108 (and the openings 1107 and 1109) described with reference to FIG. 11C.

As illustrated in FIG. 11M, a metallic material is disposed adjacent to portions of the seed layers 1180 and 1181 not covered by the photoresist layers 1138 and 1139 to form the conductive layers 1142 and 1144. In one embodiment, the conductive layers 1142 and 1144 are adjacent to the conductive posts 222 and 1137, respectively. Alternatively, portions of the conductive layers 1142 and 1144 may form second portions of the conductive posts 222 and 1137, respectively. These second portions of the conductive posts 222 and 1137 are adjacent to the first portions of the conductive posts 222 and 1137 previously described with reference to FIG. 11K. The metallic material may have similar characteristics to the material used to form the conductive blocks 1110 and 1111, such as copper or an alloy of copper. The conductive posts 222 and 1137, and the conductive layers 1142 and 1144, may be formed using any of a number of coating techniques, such as electrolytic plating.

As illustrated in FIG. 11N, the photoresist layers 1138 and 1139 are stripped to expose additional portions of the seed layers 1180 and 1181.

In one embodiment, additional photoresist may be disposed adjacent to the conductive layer 1142, where the photoresist defines openings corresponding to the locations of the openings 711 in the package 700 of FIG. 7. A portion of the conductive layer 1142 may be removed to form the openings 711. In addition, a portion of each of the conductive posts 222 may be removed to form the cavities 723 (see FIG. 7). The removal of these portions of the conductive layer 1142 may be done through chemical etching, laser drilling, or mechanical drilling. The openings 711 and the cavities 723 (see FIG. 7) have similar characteristics to those previously described for the openings 1124 and 1126 (see FIG. 11I). Then, the additional photoresist may be removed to expose conductive layer 1142′, as shown in FIG. 11O.

As illustrated, FIGS. 11P through 11Y follow FIG. 11N, though it would be understood by one of ordinary skill in the art that similar steps can follow FIG. 11O.

As illustrated in FIG. 11P, a portion of each of the conductive layers 1128 and 1129 and a portion each of the seed layers 1180 and 1181 are removed, such as by flash etching, to form a patterned conductive layer similar to the patterned conductive layer 210 of FIG. 2. The patterned conductive layer 210 includes portions 1182 a and 1182 b of the seed layer 1180, and is disposed adjacent to the conductive posts 222. (A similar patterned conductive layer 1146 corresponding to a separate semiconductor package is shown on the opposite side of the carrier 1100.) In one embodiment, the patterned conductive layer may be similar to the patterned conductive layer 1210 of FIG. 12, which includes the ground plane 1250 (see FIGS. 12 and 13).

As illustrated in FIG. 11Q, dielectric layers 1148 and 1149 are formed to cover portions of the patterned conductive layers 210 and 1146, respectively. The dielectric layer 1148 exposes a portion of the patterned conductive layer 210 including the second contact pad 226. The dielectric layers 1148 and 1149 may be formed from solder resist (solder mask), or another type of dielectric material.

As illustrated in FIG. 11R, remaining portions of the patterned conductive layers 210 and 1146 that are not covered with the dielectric layers 1148 and 1149, respectively, may be covered with a plating layer similar to the plating layer 227 of FIG. 2. (A similar plating layer 1150 corresponding to a separate semiconductor package is shown on the opposite side of the carrier 1100.) The plating layers 227 and 1150 may be formed from at least one of tin, nickel, and gold, or an alloy including tin or including nickel and gold.

As illustrated in FIG. 11S, the carrier 1100 is removed to expose the conductive layer 1103 of a substrate 1152. (The conductive layer 1105 of another substrate is also exposed by removal of the carrier 1100. This is not shown in FIG. 11S.) The substrate 1152 includes multiple adjacent substrate units similar to, for example, but not limited to the substrate unit 104 of FIG. 1 or the substrate unit 204 of FIG. 2.

As described previously with reference to FIG. 11A, the conductive layer 1103 may have a thickness 1172 in the range from about 15 μm to about 20 μm. The conductive layer 1103 may be chemically etched to reduce the thickness 1172 of the conductive layer 1103 to be in the range from about 3 μm to about 10 μm, such as from about 3 μm to about 8 μm. The reason for etching the conductive layer 1103 is that a thickness in the range from about 3 μm to about 8 μm may be preferable for reducing warpage of the substrate 1152, and enhancing reliability of packages manufactured using the substrate 1152. Thicknesses of the conductive layer 1103 greater or smaller than this range may result in additional warpage of the substrate 1152.

As illustrated in FIG. 11T, in one embodiment a support member 1170 may optionally be disposed adjacent to the conductive layer 1103, such that the conductive layer 1103 is between the conductive blocks 1110 and the support member 1170. The attachment of the support member 1170 to the substrate 1152 may also be desirable to reduce warpage of the substrate 1152 during the time period between manufacturing of the substrate 1152 and assembly of packages including the substrate 1152 (see FIGS. 11W through 11Y), and thereby to enhance reliability of packages manufactured using the substrate 1152. In one embodiment, the support member may be formed from polyethylene terephthalate (PET), metal, epoxy, copper clad laminates (CCL), and/or other suitable materials known in the art.

As illustrated in FIG. 11U, the barrier layer 1162 previously described with reference to FIG. 11B is shown, optionally disposed between the conductive blocks 1110 and the conductive layer 1103.

As illustrated in FIG. 11V, the barrier layer 1166 previously described with reference to FIG. 11E is shown, optionally disposed between the first portion 1110 a and the second portion 1110 b of the conductive blocks 1110.

As illustrated in FIG. 11W, one or more dies 102 are electrically connected to the substrate 1152, and are electrically connected to the electrically conductive layer 1103. The die 102 may be electrically connected to the electrically conductive layer 1103 via the bonding wires 136. Alternatively, a die (such as the die 302 shown in FIGS. 3, 5, 8, and 10) may be electrically connected to the electrically conductive layer 1103 via flip chip bonding. The die 102 may be attached to the substrate 1152 by the die attach layer 140. A molded structure 1154 is formed to encapsulate the die 102. In one embodiment, the optional support member 1170 (see FIG. 11T) may be removed to expose the conductive layer 1103.

As illustrated in FIG. 11X, the electrically conductive layer 1103 can be removed, such as through chemical etching and/or flash etching, to expose a dielectric layer 1156. After removal of the electrically conductive layer 1103, a portion of the conductive blocks 1110 (see FIG. 11E) can be removed, such as through chemical etching, to form the second contact pads 230 and the traces 249 of FIG. 2. Advantageously, surfaces of the dielectric layer 1156 and the conductive blocks 1110 can be protected by the electrically conductive layer 1103 from exposure to environmental conditions. It can be desirable to extend the time duration of this protection by removing the electrically conductive layer 1103 after attaching and encapsulating the die 102. In one embodiment, the barrier layer 1162 and described with reference to FIG. 11B and/or the barrier layer 1166 described with reference to FIG. 11E can act as a safeguard to prevent over-etching of the conductive blocks 1110, so that the second contact pads 230 and the traces 249 are of at least a minimum desired thickness. In one embodiment, after the conductive layer 1103 is etched away, the barrier layer 1162 and/or the barrier layer 1166 may be selectively chemically etched using an etching solution that removes the barrier layer 1162 and/or the barrier layer 1166 without damaging the second contact pads 230, the traces 249, and the dielectric layer 1156.

As illustrated in FIG. 11Y, a dielectric layer including the dielectric layer 228 of FIG. 2 may be formed and patterned such that the dielectric layer 228 exposes the second contact pads 230. Singulation may then be performed along the dashed lines 1158 and 1160 to obtain individual semiconductor packages, such as the semiconductor package 200 of FIG. 2. Electrical contacts such as the electrical contacts 133 shown in FIG. 1 can be disposed on the second contact pads 230 either before or after singulation.

It will be understood by one of ordinary skill in the art that the patterned conductive layer 110 and the conductive posts 122 of FIG. 1, the patterned conductive layer 210 and the conductive posts 222 of FIG. 2, and the corresponding structures in the packages of FIGS. 3-10 may include portions of a seed layer, similar to the way that the seed layer 118Q is included in the package structure illustrated in FIG. 11Y.

FIG. 12 illustrates a cross section view of a semiconductor package 1200, according to an embodiment of the invention. The semiconductor package 1200 is similar to the semiconductor package 100 described with reference to FIG. 1, except that the semiconductor package 1200 includes a ground plane 1250 positioned between the dielectric layer 124 and the dielectric layer 118. The ground plane 1250 is included in and formed from the same material as a patterned conductive layer 1210, which is formed similarly to the patterned conductive layer 110 of FIG. 1. The ground plane 1250 may serve the dual purpose of heat dissipation and providing the die 102 electrical connectivity to ground. The die 102 may be electrically connected to the ground plane 1250 by wires 136. The ground plane 1250 is electrically connected to external electrical contacts 133 through the conductive posts 122. Heat from the package 1200 can dissipate through the external electrical contacts 133 to, for example, an underlying printed circuit board. One or more of the external electrical contacts 133 may provide electrical connectivity to ground. Alternatively, the external contacts 133 may serve only a heat dissipation function. It would be understood by one of ordinary skill in the art that the packages of other wire-bonding embodiments described herein may also support a similar structure.

FIG. 13 illustrates a top cross section view of the semiconductor package 1200 of FIG. 12, according to an embodiment of the invention. This top cross section view shows the structure of the ground plane 1250. In one embodiment, the ground plane 1250 is in the form of a mesh that defines openings in a two-dimensional grid pattern, as shown in FIG. 13. The openings may be of substantially the same size, and may be substantially regularly spaced, as shown in FIG. 13. Alternatively, the openings may be of different sizes, and may be irregularly spaced (for example, in the case that some openings are larger and others are smaller). A mesh pattern for the ground plane 1250 may provide greater reliability than other patterns for the ground plane 1250 at the interface between the dielectric layer 124 (such as a solder mask layer) and the ground plane 1250.

Alternatively, the ground plane 1250 may also be a solid plane, a ring pattern, and/or a bar pattern. The ring pattern may include a single ring, or may include multiple rings with openings between the various rings. The multiple rings may be concentric rings of different sizes, and the rings may be substantially circular. The bar pattern may include multiple bars extending from a first side of the ground plane 1250 to an opposite second side of the ground plane 1250, and having openings between the bars. The bars may be substantially parallel. The bars may be of substantially the same length, or may be of different lengths.

While FIGS. 1 through 13 illustrate packages including a single sided substrate and a set of electrically conductive posts embedded within the single sided substrate, it is contemplated that a substrate in a semiconductor package, in general, can include multiple dielectric layers, each including an embedded set of electrically conductive posts (or, more generally, electrically conductive vias). A substrate including multiple dielectric layers can be desirable, for example, in packages with relatively complex circuitry to allow for flexibility in routing. Electrically conductive posts can be used so as to effectively reduce package size and package area, while controlling the cost and complexity of packaging processes. In some embodiments, multiple dielectric layers embedding respective electrically conductive posts can be included to cope with a variety of contact distributions and to enhance structural rigidity and reliability of the substrate.

FIG. 14A to FIG. 14U illustrate a process for fabricating a substrate including multiple dielectric layers, according to embodiments of the invention. Certain aspects of the process can be implemented in a similar manner as described above, and are not repeated below.

Referring to FIG. 14A, a carrier 1450 is provided, and the carrier 1450 includes a first surface 1450 a and a second surface 1450 b opposite to the first surface 1450 a. In the following, operations are carried out adjacent to both the first surface 1450 a and the second surface 1450 b of the carrier 1450, thereby increasing manufacturing throughput.

Next, referring to FIG. 14B, a first inner, electrically conductive pattern 1411 a is formed adjacent to the first surface 1450 a of the carrier 1450. In the present embodiment, another first inner, electrically conductive pattern 1411 b also is formed adjacent to the second surface 1450 b of the carrier 1450. The first inner, electrically conductive patterns 1411 a and 1411 b can be formed by an additive process, a semi-additive process, or a subtractive process. Each of the first inner, electrically conductive patterns 1411 a and 1411 b includes a set of pads and a set of traces, which can be formed substantially simultaneously in a common process operation.

Still referring to FIG. 14B, a set of first inner, electrically conductive posts 1421 a are formed adjacent to the first inner, electrically conductive pattern 1411 a. In the present embodiment, another set of first inner, electrically conductive posts 1421 b also are formed adjacent to the first inner, electrically conductive pattern 1411 b. The first inner, electrically conductive posts 1421 a and 1421 b can be formed with the first inner, electrically conductive patterns 1411 a and 1411 b in a common process operation by an additive process, a semi-additive process, or a subtractive process. Alternatively, formation of the first inner, electrically conductive posts 1421 a and 1421 b can be carried out with a separate process operation.

Referring to FIG. 14C, a first inner, dielectric layer 1431 a is laminated to the first inner, electrically conductive pattern 1411 a and the first inner, electrically conductive posts 1421 a, so that the first inner, electrically conductive pattern 1411 a and the first inner, electrically conductive posts 1421 a are embedded in the first inner, dielectric layer 1431 a. In the present embodiment, another first inner, dielectric layer 1431 b also is laminated to the first inner, electrically conductive pattern 1411 b and the first inner, electrically conductive posts 1421 b. In the present embodiment, each of the first inner, dielectric layers 1431 a and 1431 b includes a fiber-reinforced resin material, such as a prepreg material, including fibers 1490 a and 1490 b to strengthen the dielectric layers 1431 a and 1431 b. As shown in FIG. 14C, the fibers 1490 a subsequent to lamination of the dielectric layer 1431 a are re-oriented from a generally horizontal plane, with portions adjacent to the first inner, electrically conductive posts 1421 a being pushed along a vertically extending direction of the first inner, electrically conductive posts 1421 a and away from the first inner, electrically conductive pattern 1411 a. Likewise, the fibers 1490 b subsequent to lamination of the dielectric layer 1431 b are re-oriented from a generally horizontal plane, with portions adjacent to the first inner, electrically conductive posts 1421 b being pushed along a vertically extending direction of the first inner, electrically conductive posts 1421 b and away from the first inner, electrically conductive pattern 1411 b.

Then, referring to FIG. 14D, an upper, exposed portion of the first inner, dielectric layer 1431 a is removed to expose the first inner, electrically conductive posts 1421 a. In the present embodiment, a lower, exposed portion of the first inner, dielectric layer 1431 b also is removed to expose the first inner, electrically conductive posts 1421 b. The exposed portions of the first inner, dielectric layers 1431 a and 1431 b can be removed by routing, grinding, or another material removal technique. As shown in FIG. 14D, exposed surfaces of the first inner, electrically conductive posts 1421 a and 1421 b are aligned (e.g., substantially aligned or co-planar) with exposed surfaces of the first inner, dielectric layers 1431 a and 1431 b, respectively.

Then, referring to FIG. 14E, a second inner, electrically conductive pattern 1412 a is formed adjacent to the exposed surfaces of the first inner, dielectric layer 1431 a and the first inner, electrically conductive posts 1421 a, and is connected to the first inner, electrically conductive posts 1421 a. In the present embodiment, another second inner, electrically conductive pattern 1412 b also is formed substantially simultaneously adjacent to the exposed surfaces of the first inner, dielectric layer 1431 b and the first inner, electrically conductive posts 1421 b, and is connected to the first inner, electrically conductive posts 1421 b. The second inner, electrically conductive patterns 1412 a and 1412 b can be formed by an additive process, a semi-additive process, or a subtractive process. Each of the second inner, electrically conductive patterns 1412 a and 1412 b includes a set of pads and a set of traces, which can be formed substantially simultaneously in a common process operation.

Still referring to FIG. 14E, a set of second inner, electrically conductive posts 1422 a are formed adjacent to the second inner, electrically conductive pattern 1412 a. In the present embodiment, another set of second inner, electrically conductive posts 1422 b also are formed adjacent to the second inner, electrically conductive pattern 1412 b. The second inner, electrically conductive posts 1422 a and 1422 b can be formed with the second inner, electrically conductive patterns 1412 a and 1412 b in a common process operation by an additive process, a semi-additive process, or a subtractive process. Alternatively, formation of the second inner, electrically conductive posts 1422 a and 1422 b can be carried out with a separate process operation.

Referring to FIG. 14F, a second inner, dielectric layer 1432 a is laminated to the second inner, electrically conductive pattern 1412 a and the second inner, electrically conductive posts 1422 a, so that the second inner, electrically conductive pattern 1412 a and the second inner, electrically conductive posts 1422 a are embedded in the second inner, dielectric layer 1432 a. In the present embodiment, another second inner, dielectric layer 1432 b also is laminated to the second inner, electrically conductive pattern 1412 b and the second inner, electrically conductive posts 1422 b. Each of the second inner, dielectric layers 1432 a and 1432 b can be a fiber-reinforced resin material, such as a prepreg material. While not shown in FIG. 14F, each of the second inner, dielectric layers 1432 a and 1432 b can include fibers, and these fibers can be re-oriented subsequent to lamination, with portions adjacent to the second inner, electrically conductive posts 1422 a and 1422 b being pushed along vertically extending directions of the second inner, electrically conductive posts 1422 a and 1422 b and away from the second inner, electrically conductive patterns 1412 a and 1412 b.

Next, referring to FIG. 14G, an upper, exposed portion of the second inner, dielectric layer 1432 a is removed to expose the second inner, electrically conductive posts 1422 a. In the present embodiment, a lower, exposed portion of the second inner, dielectric layer 1432 b also is removed to expose the second inner, electrically conductive posts 1422 b. The exposed portions of the second inner, dielectric layers 1432 a and 1432 b can be removed by routing, grinding, or another material removal technique. As shown in FIG. 14G, exposed surfaces of the second inner, electrically conductive posts 1422 a and 1422 b are aligned (e.g., substantially aligned or co-planar) with exposed surfaces of the second inner, dielectric layers 1432 a and 1432 b, respectively.

Next, referring to FIG. 14H, a third inner, electrically conductive pattern 1413 a is formed adjacent to the exposed surfaces of the second inner, dielectric layer 1432 a and the second inner, electrically conductive posts 1422 a, and is connected to the second inner, electrically conductive posts 1422 a. In the present embodiment, another third inner, electrically conductive pattern 1413 b also is formed adjacent to the second inner, dielectric layer 1432 b and the second inner, electrically conductive posts 1422 b, and is connected to the second inner, electrically conductive posts 1422 b. The third inner, electrically conductive patterns 1413 a and 1413 b can be formed by an additive process, a semi-additive process, or a subtractive process. Each of the third inner, electrically conductive patterns 1413 a and 1413 b includes a set of pads and a set of traces, which can be formed substantially simultaneously in a common process operation.

Then, referring to FIG. 14I, the carrier 1450 is removed or separated from the first inner, electrically conductive pattern 1411 a and the first inner, dielectric layer 1431 a, so as to expose the first inner, electrically conductive pattern 1411 a. In the present embodiment, the carrier 1450 also is removed or separated from the first inner, electrically conductive pattern 1411 b and the first inner, dielectric layer 1431 b, so as to expose the first inner, electrically conductive pattern 1411 b. Therefore, two package carrier structures are formed, wherein the upper structure is described in the following operations of the present embodiment as an example. As shown in FIG. 14I, exposed surfaces of the first inner, electrically conductive patterns 1411 a and 1411 b are aligned (e.g., substantially aligned or co-planar) with exposed surfaces of the first inner, dielectric layers 1431 a and 1431 b, respectively.

The previously described FIGS. 14A through 14I are common to multiple embodiments of process for fabricating a substrate including multiple dielectric layers. In one embodiment, the process is illustrated by FIG. 14A to FIG. 14N. In another embodiment, the process is illustrated by FIG. 14A to 14I followed by FIG. 14O to FIG. 14R. In a further embodiment, the process is illustrated by FIG. 14A to 14I followed by FIG. 14S to FIG. 14U.

In one embodiment, referring to FIG. 14J, a set of first outer, electrically conductive posts 1423 are formed adjacent to the third inner, electrically conductive pattern 1413 a. In the present embodiment, a set of second outer, electrically conductive posts 1424 also are formed adjacent to the first inner, electrically conductive pattern 1411 a. The first outer, electrically conductive posts 1423 and the second outer, electrically conductive posts 1424 can be formed by an additive process, a semi-additive process, or a subtractive process.

Next, referring to FIG. 14K, a first outer, dielectric layer 1433 is laminated to the third inner, electrically conductive pattern 1413 a and the first outer, electrically conductive posts 1423, so that the third inner, electrically conductive pattern 1413 a and the first outer, electrically conductive posts 1423 are embedded in the first outer, dielectric layer 1433.

Still referring to FIG. 14K, a second outer, dielectric layer 1434 also is laminated to the first inner, electrically conductive pattern 1411 a and the second outer, electrically conductive posts 1424, so that the second outer, electrically conductive posts 1424 are embedded in the second outer, dielectric layer 1434. Each of the first outer, dielectric layer 1433 and the second outer, dielectric layer 1434 can be a fiber-reinforced resin material, such as a prepreg material.

While not shown in FIG. 14K, each of the first outer, dielectric layer 1433 and the second outer, dielectric layer 1434 can include fibers, and these fibers can be re-oriented subsequent to lamination, with portions adjacent to the first outer, electrically conductive posts 1423 and the second outer, electrically conductive posts 1424 being pushed along vertically extending directions of the first outer, electrically conductive posts 1423 and the second outer, electrically conductive posts 1424 and away from the third inner, electrically conductive pattern 1413 a and the first inner, electrically conductive pattern 1411 a.

Referring to FIG. 14L, an upper, exposed portion of the first outer, dielectric layer 1433 is removed to expose the first outer, electrically conductive posts 1423. In the present embodiment, a lower, exposed portion of the second outer, dielectric layer 1434 also is removed to expose the second outer, electrically conductive posts 1424. The exposed portions of the first outer, dielectric layer 1433 and the second outer, dielectric layer 1434 can be removed by routing, grinding, or another material removal technique. As shown in FIG. 14L, exposed surfaces of the first outer, electrically conductive posts 1423 and the second outer, electrically conductive posts 1424 are aligned (e.g., substantially aligned or co-planar) with exposed surfaces of the first outer, dielectric layer 1433 and the second outer, dielectric layer 1434, respectively.

Next, referring to FIG. 14M, a first outer, electrically conductive pattern 1414 is formed adjacent to the first outer, dielectric layer 1433 and the first outer, electrically conductive posts 1423, and is connected to the first outer, electrically conductive posts 1423. In the present embodiment, a second outer, electrically conductive pattern 1415 also is formed substantially simultaneously adjacent to the second outer, dielectric layer 1434 and the second outer, electrically conductive posts 1424, and is connected to the second outer, electrically conductive posts 1424. The first outer, electrically conductive pattern 1414 and the second outer, electrically conductive pattern 1415 can be formed by an additive process, a semi-additive process, or a subtractive process. Each of the first outer, electrically conductive pattern 1414 and the second outer, electrically conductive pattern 1415 includes a set of pads and a set of traces, which can be formed substantially simultaneously in a common process operation.

Referring to FIG. 14N, a first solder mask layer 1441 is formed adjacent to the first outer, dielectric layer 1433 and at least a portion of the first outer, electrically conductive pattern 1414, while a remaining portion of the first outer, electrically conductive pattern 1414 is exposed to define a set of first pads. In the present embodiment, a second solder mask layer 1442 also is formed adjacent to the second outer, dielectric layer 1434 and at least a portion of the second outer, electrically conductive pattern 1415, while a remaining portion of the second outer, electrically conductive pattern 1415 is exposed to define a set of second pads. In such manner, a package carrier 1400 is fabricated.

In another embodiment, referring to FIG. 14O, a set of first outer, electrically conductive posts 1423′ are formed adjacent to the third inner, electrically conductive pattern 1413 a. In the present embodiment, a set of second outer, electrically conductive posts 1424′ also are formed adjacent to the first inner, electrically conductive pattern 1411 a. The first outer, electrically conductive posts 1423′ and the second outer, electrically conductive posts 1424′ are similar to the conductive posts 1423 and 1424 described with reference to FIG. 14J, except that the heights of the conductive posts 1423′ and 1424′ are smaller than the heights of the conductive posts 1423 and 1424, respectively.

Next, as previously described with reference to FIG. 14K, the first outer, dielectric layer 1433 is laminated to the third inner, electrically conductive pattern 1413 a and the first outer, electrically conductive posts 1423′, so that the third inner, electrically conductive pattern 1413 a and the first outer, electrically conductive posts 1423′ are embedded in the first outer, dielectric layer 1433. Similarly, the second outer, dielectric layer 1434 also is laminated to the first inner, electrically conductive pattern 1411 a and the second outer, electrically conductive posts 1424′, so that the second outer, electrically conductive posts 1424′ are embedded in the second outer, dielectric layer 1434. Each of the first outer, dielectric layer 1433 and the second outer, dielectric layer 1434 can be a fiber-reinforced resin material, such as a prepreg material.

Next, a conductive layer 1450, such as a copper foil, is disposed adjacent to the first outer, dielectric layer 1433. Similarly, a conductive layer 1451, such as a copper foil, is disposed adjacent to the second outer, dielectric layer 1434.

Referring to FIG. 14P, openings 1453 are formed that extend through the conductive layer 1450 and the first outer, dielectric layer 1433. The openings 1453 expose at least a portion of a surface 1454 of the first outer, electrically conductive posts 1423′. In one embodiment, the openings 1453 may be formed by laser drilling. A metallic material is then disposed adjacent to the conductive layer 1450 and the first outer, electrically conductive posts 1423′ to form a conductive layer 1452, such as a seed layer. Similar processing takes place on the bottom side of the substrate, adjacent to the second outer, electrically conductive posts 1424′ and the second outer, dielectric layer 1434.

Referring to FIG. 14Q, the first outer, electrically conductive pattern 1414 is formed adjacent to the conductive layer 1452, and is connected to the first outer, electrically conductive posts 1423′. The first outer, electrically conductive pattern 1414 can be formed by an additive process, a semi-additive process, or a subtractive process. The first outer, electrically conductive pattern 1414 includes a set of pads and a set of traces, which can be formed substantially simultaneously in a common process operation. Similar processing takes place on the bottom side of the substrate to form the second outer, electrically conductive pattern 1415.

Referring to FIG. 14R, portions of the conductive layers 1450 and 1452 are removed to correspond to the first outer, electrically conductive pattern 1414. This can be done through a subtractive process. Then, the first solder mask layer 1441 is formed adjacent to the first outer, dielectric layer 1433 and at least a portion of the first outer, electrically conductive pattern 1414, while a remaining portion of the first outer, electrically conductive pattern 1414 is exposed to define a set of first pads. Similar processing takes place on the bottom side of the substrate to form a set of second pads from the second outer, electrically conductive pattern 1415 and exposed by a second solder mask layer 1442. In such manner, a package carrier 1400′ is fabricated.

In a further embodiment, referring to FIG. 14S, the first outer, dielectric layer 1433 is laminated to the third inner, electrically conductive pattern 1413 a, so that the third inner, electrically conductive pattern 1413 a is embedded in the first outer, dielectric layer 1433. In this embodiment, unlike in FIGS. 14J and 14K, the conductive posts 1423 are not formed. Similarly, the second outer, dielectric layer 1434 also is laminated to the first inner, electrically conductive pattern 1411 a. Each of the first outer, dielectric layer 1433 and the second outer, dielectric layer 1434 can be a fiber-reinforced resin material, such as a prepreg material.

Next, the conductive layer 1450, such as a copper foil, is disposed adjacent to the first outer, dielectric layer 1433. Similarly, the conductive layer 1451, such as a copper foil, is disposed adjacent to the second outer, dielectric layer 1434.

Referring to FIG. 14T, openings 1463 are formed that extend through the conductive layer 1450 and the first outer, dielectric layer 1433. The openings 1453 expose at least a portion of the third inner, electrically conductive pattern 1413 a. In one embodiment, the openings 1463 may be formed by laser drilling. A metallic material is then disposed adjacent to the conductive layer 1450 and the third inner, electrically conductive pattern 1413 a to form the conductive layer 1452, such as a seed layer. Similar processing takes place on the bottom side of the substrate, adjacent to the second outer, electrically conductive posts 1424′ and the second outer, dielectric layer 1434.

Then, the first outer, electrically conductive pattern 1414 is formed adjacent to the conductive layer 1452, and is connected to the third inner, electrically conductive pattern 1413 a. The first outer, electrically conductive pattern 1414 can be formed by an additive process, a semi-additive process, or a subtractive process. The first outer, electrically conductive pattern 1414 includes a set of pads and a set of traces, which can be formed substantially simultaneously in a common process operation. Similar processing takes place on the bottom side of the substrate to form the second outer, electrically conductive pattern 1415.

Referring to FIG. 14U, portions of the conductive layers 1450 and 1452 are removed to correspond to the first outer, electrically conductive pattern 1414. This can be done through a subtractive process. Then, the first solder mask layer 1441 is formed adjacent to the first outer, dielectric layer 1433 and at least a portion of the first outer, electrically conductive pattern 1414, while a remaining portion of the first outer, electrically conductive pattern 1414 is exposed to define a set of first pads. Similar processing takes place on the bottom side of the substrate to form a set of second pads from the second outer, electrically conductive pattern 1415 and exposed by a second solder mask layer 1442. In such manner, a package carrier 1400″ is fabricated.

While not shown in FIG. 14A through FIG. 14U, it is contemplated that at least a subset of the electrically conductive posts (e.g., the first outer, electrically conductive posts 1423) can be formed so as to include multiple post segments (or, more generally, via segments) having different diameters.

Once the package carrier 1400 is fabricated in accordance with the embodiment illustrated by FIG. 14A through FIG. 14N, a package according to an embodiment of the invention can be fabricated as shown in FIG. 15A, namely by disposing a chip 1500 adjacent to the first pads of the package carrier 1400, electrically connecting the chip 1500 to the package carrier 1400 by a flip-chip bonding technique (or a wire-bonding technique in another embodiment), and disposing solder balls (not shown) adjacent to the second pads of the package carrier 1400.

Alternatively, once the package carrier 1400′ is fabricated in accordance with the embodiment illustrated by FIG. 14A through FIG. 14I and FIG. 14O through FIG. 14R, a package according to an embodiment of the invention can be fabricated as shown in FIG. 15B, namely by disposing a chip 1500 adjacent to the first pads of the package carrier 1400′, electrically connecting the chip 1500 to the package carrier 1400′ by a flip-chip bonding technique (or a wire-bonding technique in another embodiment), and disposing solder balls (not shown) adjacent to the second pads of the package carrier 1400′.

Alternatively, once the package carrier 1400″ is fabricated in accordance with the embodiment illustrated by FIG. 14A through FIG. 14I and FIG. 14S through FIG. 14U, a package according to an embodiment of the invention can be fabricated as shown in FIG. 15C, namely by disposing a chip 1500 adjacent to the first pads of the package carrier 1400″, electrically connecting the chip 1500 to the package carrier 1400″ by a flip-chip bonding technique (or a wire-bonding technique in another embodiment), and disposing solder balls (not shown) adjacent to the second pads of the package carrier 1400″.

In summary, in a substrate of some embodiments of the invention, electrically conductive posts can be used so as to effectively reduce a package size and a package area, while controlling the cost and complexity of packaging processes. In some embodiments, multiple dielectric layers embedding respective electrically conductive posts can be included to cope with a variety of contact distributions and to enhance structural rigidity and reliability of the package carrier.

While the invention has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the invention. It should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the true spirit and scope of the invention as defined by the appended claims. The illustrations may not be necessarily be drawn to scale, and manufacturing tolerances may result in departure from the artistic renditions herein. There may be other embodiments of the present invention which are not specifically illustrated. Thus, the specification and the drawings are to be regarded as illustrative rather than restrictive. Additionally, the drawings illustrating the embodiments of the present invention may focus on certain major characteristic features for clarity. Furthermore, modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the invention. All such modifications are intended to be within the scope of the claims appended hereto. In particular, while the methods disclosed herein have been described with reference to particular operations performed in a particular order, it will be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the invention. Accordingly, unless specifically indicated herein, the order and grouping of the operations are not limitations of the invention. 

1. A semiconductor package, comprising: a substrate unit including: a first patterned conductive layer having an upper surface; a first dielectric layer disposed adjacent to the upper surface of the first patterned conductive layer, the first dielectric layer exposing a part of the first patterned conductive layer to form a plurality of first contact pads; a second patterned conductive layer below the first patterned conductive layer and having a lower surface; a second dielectric layer between the first patterned conductive layer and the second patterned conductive layer, wherein: the second dielectric layer defines a plurality of openings extending from the first patterned conductive layer to the second patterned conductive layer; and the second patterned conductive layer includes a plurality of second contact pads exposed by the second dielectric layer; and a plurality of conductive posts, each of the plurality of conductive posts extending from the first patterned conductive layer to a corresponding one of the plurality of second contact pads through a corresponding one of the plurality of openings in the second dielectric layer, the each of the plurality of conductive posts filling the corresponding one of the plurality of openings in the second dielectric layer; wherein at least one of the plurality of conductive posts defines a cavity; a die electrically connected to the plurality of first contact pads; and a package body covering the first patterned conductive layer and the die.
 2. The semiconductor package of claim 1, wherein: each of the plurality of conductive posts has an upper surface having a first area and a lower surface having a second area; and each of the plurality of second contact pads has an upper surface having a third area; wherein the first area is larger than the second area, and wherein the third area is larger than the second area.
 3. The semiconductor package of claim 1, wherein: the second dielectric layer has a lower surface; and the lower surface of the conductive layer is recessed from the lower surface of the second dielectric layer.
 4. The semiconductor package of claim 1, wherein: the first patterned conductive layer includes a ground plane positioned between the first dielectric layer and the second dielectric layer; at least one of the plurality of openings defined by the second dielectric layer extends from the ground plane to the second patterned conductive layer; and at least one of the plurality of conductive posts extends from the ground plane to at least one of the plurality of second contact pads through the at least one of the plurality of openings in the second dielectric layer.
 5. The semiconductor package of claim 4, wherein the ground plane includes a mesh portion.
 6. The semiconductor package of claim 4, wherein: the die is connected to the at least one of the plurality of second contact pads through the ground plane and the at least one of the plurality of conductive posts to provide the die electrical connectivity to ground and to facilitate heat dissipation from the semiconductor package.
 7. The semiconductor package of claim 1, wherein the cavity is filled by a part of the first dielectric layer.
 8. The semiconductor package of claim 1, wherein the die is flip chip bonded to the plurality of first contact pads.
 9. The semiconductor package of claim 8, wherein the die is connected to the plurality of first contact pads by a plurality of fused conductive bumps extending through the first dielectric layer.
 10. The semiconductor package of claim 8, wherein the die is connected to the plurality of first contact pads by a plurality of fused conductive bumps, wherein the cavity is filled by a part of at least one of the plurality of fused conductive bumps.
 11. A method of manufacturing a substrate, comprising: providing a carrier having an upper surface and a lower surface, and with a first metal layer formed adjacent to the upper surface of the carrier; forming a first plurality of conductive blocks extending vertically from the first metal layer, each of the first plurality of conductive blocks having an upper surface; forming a first dielectric layer that defines a first plurality of openings, each of the first plurality of openings exposing a part of the upper surface of a corresponding one of the first plurality of conductive blocks; forming a first plurality of conductive posts and a first patterned conductive layer, each of the first plurality of conductive posts extending from a corresponding one of the first plurality of conductive blocks to the first patterned conductive layer and filling a corresponding one of the first plurality of openings; and removing the carrier to expose the first metal layer.
 12. The method of claim 11, further comprising removing a portion of the first metal layer after removing the carrier.
 13. The method of claim 11, further comprising attaching a support member to the first metal layer after removing the carrier.
 14. The method of claim 11, wherein the first metal layer includes a metal foil and a barrier sublayer formed adjacent to the metal foil, such that the first plurality of conductive blocks extend vertically from the barrier sublayer.
 15. The method of claim 11, wherein the first metal layer has a thickness in the range from 2 μm to 20 μm.
 16. The method of claim 11, wherein a second metal layer is formed adjacent to the lower surface of the carrier, and further comprising: forming a second plurality of conductive blocks extending vertically from the second metal layer, each of the second plurality of conductive blocks having a lower surface; forming a second dielectric layer that defines a second plurality of openings, each of the second plurality of openings exposing a part of the lower surface of a corresponding one of the second plurality of conductive blocks; forming a second plurality of conductive posts and a second patterned conductive layer, each of the second plurality of conductive posts extending from a corresponding one of the second plurality of conductive blocks to the second patterned conductive layer and filling a corresponding one of the second plurality of openings; and removing the carrier to expose the second metal layer.
 17. The method of claim 11, further comprising removing a portion of the first plurality of conductive blocks to form a plurality of contact pads for electrical connection externally.
 18. The method of claim 11, wherein forming the first dielectric layer includes: disposing a dielectric layer covering the first metal layer and the first plurality of conductive blocks, wherein the dielectric layer is positioned between a second metal layer and the first plurality of conductive blocks; patterning the second metal layer to expose portions of the dielectric layer; and removing the exposed portions of the dielectric layer to form the first plurality of openings.
 19. The method of claim 18, wherein disposing the dielectric layer includes covering the first metal layer and the first plurality of conductive blocks with at least one of a patterned prepreg layer and a resin coated copper film.
 20. The method of claim 18, wherein disposing the dielectric layer includes printing a layer of at least one of solder mask and epoxy to cover the first metal layer and the first plurality of conductive blocks.
 21. A method of manufacturing a semiconductor package, comprising: providing a substrate including: a metal layer; a plurality of conductive blocks formed adjacent to the metal layer, each of the plurality of conductive blocks having an upper surface; a dielectric layer that defines a plurality of openings, each of the plurality of openings exposing a part of the upper surface of a corresponding one of the plurality of conductive blocks; a patterned conductive layer; and a plurality of conductive posts, each of the plurality of conductive posts extending from a corresponding one of the plurality of conductive blocks to the patterned conductive layer and filling a corresponding one of the plurality of openings; electrically connecting a die to the patterned conductive layer; forming a package body covering the dielectric layer and the die; and removing the metal layer to expose the plurality of conductive blocks.
 22. The method of claim 21, wherein the metal layer includes: a metal foil; and a barrier sublayer adjacent to the metal foil and positioned between the metal foil and the plurality of conductive blocks.
 23. The method of claim 22, wherein removing the metal layer includes: removing the metal foil to expose the barrier sublayer; and removing the barrier sublayer to expose the plurality of conductive blocks.
 24. The method of claim 22, wherein the metal foil has a thickness in the range from 2 μm to 20 μm.
 25. The method of claim 21, wherein providing the substrate comprises: providing a carrier having an upper surface and a lower surface, and with the metal layer formed adjacent to the upper surface of the carrier; forming the plurality of conductive blocks extending vertically from an upper surface of the metal layer, each of the plurality of conductive blocks having an upper surface; forming the dielectric layer, the dielectric layer defining the plurality of openings, each of the plurality of openings exposing a part of the upper surface of a corresponding one of the plurality of conductive blocks; forming the plurality of conductive posts and the patterned conductive layer, each of the plurality of conductive posts extending from the upper surface of the corresponding one of the plurality of conductive blocks to the patterned conductive layer and filling a corresponding one of the plurality of openings; and removing the carrier to fully expose a lower surface of the metal layer.
 26. The method of claim 25, wherein forming the patterned conductive layer comprises: forming a first conductive sublayer adjacent to the plurality of conductive blocks; forming a patterned dry film adjacent to the first conductive sublayer; forming a second conductive sublayer adjacent to the first conductive sublayer; forming a cavity extending through at least the second conductive sublayer, the cavity associated with a corresponding one of the plurality of conductive blocks; disposing the dielectric layer adjacent to the patterned conductive layer, a part of the first dielectric layer filling the cavity. 